Solution-Processable LaTiO x-PVP as Silicon-Free Gate Dielectric at Low Temperature for High-Performance Organic-Inorganic Field Effect Transistors

AuthorsH Najafi-Ashtiani, A Tavousi, A Ramzannezhad, A Rahdar
JournalJournal of Electronic Materials
Page number1-8
Paper TypeFull Paper
Published At2021
Journal GradeISI
Journal TypeTypographic
Journal CountryUnited States
Journal IndexJCR

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