Solution-Processable LaTiO x-PVP as Silicon-Free Gate Dielectric at Low Temperature for High-Performance Organic-Inorganic Field Effect Transistors

AuthorsH Najafi-Ashtiani, A Tavousi, A Ramzannezhad, A Rahdar
JournalJournal of Electronic Materials
Presented byولایت
Page number1-8
Paper TypeFull Paper
Published At2021
Journal GradeISI
Journal TypeTypographic
Journal CountryArgentina

Abstract

Paper URL