Comparison between Si/SiO {sub 2} and InP/Al {sub 2} O {sub 3} based MOSFETs

AuthorsH Arabshahi, MR Benam, A Vatan-Khahan, M Abedininia
JournalJournal of Experimental and Theoretical Physics
Paper TypeFull Paper
Published At2016
Journal GradeISI
Journal TypeTypographic
Journal CountryIran, Islamic Republic Of

Abstract